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savantic semiconductor product specification silicon npn power transistors 2SC3250 d escription with to-220 package high v c eo large p c applications for tv video output amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 0.1 a i cp collector current-peak 0.2 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3250 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1ma ;i b =0 300 v v (br)cbo collector-base breakdown voltage i c =0.1ma ;i e =0 300 v v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 7 v v ce(sat) collector-emitter saturation voltage i c =50ma ;i b =5ma 1.5 v v be base-emitter on voltage i c =30ma ; v ce =10v 1.2 v h fe-1 dc current gain i c =5ma ; v ce =50v 50 250 h fe-2 dc current gain i c =30ma ; v ce =10v 30 c ob collector output capacitance i e =0; v cb =30v,f=1mhz 5.0 pf f t transition frequency i e =-20ma ; v cb =30v 70 100 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC3250 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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